PART |
Description |
Maker |
EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E |
512M bits XDR DRAM 512M bits XDR?/a> DRAM
|
Elpida Memory
|
EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
EDE5132BABG-6G-F |
512M bits DDR2 SDRAM 16M X 32 DDR DRAM, 0.45 ns, PBGA128
|
ELPIDA MEMORY INC
|
LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68 2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC Elpida Memory, Inc.
|
MSM54V12222A |
From old datasheet system 262214 Words x 12 Bits FIELD MEMORY 262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
EDS2516APSA-75 EDS2508APSA-75 EDS2508APSA-75L EDS2 |
256M bits SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 256M bits SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
http:// Elpida Memory, Inc.
|
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|